ELM5E401PA-S Datasheet, PDF (1/5 Pages) ELM Technology Corporation – Single P-channel MOSFET

Single P-channel MOSFET
ELM5E401PA-S
■General description
ELM5E401PA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-20V
• Id=-0.7A
• Rds(on) = 620mΩ (Vgs=-4.5V)
• Rds(on) = 860mΩ (Vgs=-2.5V)
• Rds(on) = 1450mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Tc=25°C
Tc=70°C
Symbol
Vdss
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
-20
V
±12
V
-0.7
A
-0.4
-1.0
A
0.27
W
0.16
- 55 to 150
°C
■Pin configuration
SOT-523(TOP VIEW)
3
1
2
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
5-1