ELM5B801QA-N Datasheet, PDF (1/5 Pages) ELM Technology Corporation – Dual P-channel MOSFET

Dual P-channel MOSFET
ELM5B801QA-N
■General description
ELM5B801QA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Features
• Vds=-20V
• Id=-4.5A, Rds(on)=96mΩ (Vgs=-4.5V)
• Id=-3.8A, Rds(on)=128mΩ (Vgs=-2.5V)
• Id=-2.5A, Rds(on)=180mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
-20
V
±12
V
-4.5
A
-3.8
-12
A
6.5
W
4.2
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Typ.
Maximum junction-to-ambient
Steady-state Rθja
Max.
120
Unit
°C/W
■Pin configuration
DFN6-2x2(TOP VIEW)
Pin No.
1
2
3
4
5
6
Pin name
SOURCE1
GATE1
DRAIN2
SOURCE2
GATE2
DRAIN1
■Circuit
D1
D2
G1
G2
S1
S2
5-1