ELM3F601JA-S Datasheet, PDF (1/7 Pages) ELM Technology Corporation – Complementary MOSFET

Complementary MOSFET
ELM3F601JA-S
■General Description
ELM3F601JA-S uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Features
N-channel
• Vds=30V
• Id=7.3A
• Rds(on) < 24mΩ(Vgs=10V)
• Rds(on) < 38mΩ(Vgs=4.5V)
P-channel
Vds=-30V
Id=-4.3A
Rds(on) < 60mΩ(Vgs=-10V)
Rds(on) < 85mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj,Tstg
Ta=25°C. Unless otherwise noted.
N-ch (Max.) P-ch (Max.) Unit Note
30
-30
V
±20
±20
V
7.3
-4.3
A2
5.8
-3.4
60
-30
A1
17.4
-18.0
A
15.0
16.2
mJ
2.0
1.7
W
1.3
1.1
-55 to 150
°C
■Thermal Characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol Device
Typ.
N-ch
Rθjc
P-ch
N-ch
Rθja
P-ch
Max.
7.5
8.0
61.0
70.0
Unit Note
°C/W
°C/W 3
■Pin configuration
PDFN-3x3(TOP VIEW)
8 765
•
1 234
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE1
GATE1
SOURCE2
GATE2
DRAIN2
DRAIN2
DRAIN1
DRAIN1
■Circuit
• N-ch
• P-ch
D1 D1
D2 D2
G1
G2
S1
S2
7-1