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ELM3F401JA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single P-channel MOSFET | |||
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Single P-channel MOSFET
ELM3F401JA-S
â General description
ELM3F401JA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
â Features
⢠Vds=-30V
⢠Id=-8A
⢠Rds(on) < 20mΩ (Vgs=-10V)
⢠Rds(on) < 35mΩ (Vgs=-4.5V)
â Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
-8.0
A
4
-6.3
-80
A
3
-29
A
42
mJ
2.0
W
1.2
-55 to 150
°C
â Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Typ.
Rθjc
Rθja
Max.
6
62
Unit Note
°C/W
°C/W
5
â Pin configuration
PDFN-3x3(TOP VIEW)
8 765
â¢
1 2 34
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
â Circuit
D
G
S
4-1
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