ELM3DK502A-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM3DK502A-S
■General description
ELM3DK502A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=30V
• Id=10A
• Rds(on) < 10.5mΩ (Vgs=10V)
• Rds(on) < 15.0mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
L=0.1mH
Tc=25°C
Tc=70°C
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit Note
30
V
±20
V
10
A
8
120
A
4
24
A
28
mJ
2.0
W
1.3
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Typ.
Rθjc
Rθja
Max.
4
60
Unit Note
°C/W
°C/W
5
■Pin configuration
PDFN-5×6(TOP VIEW)
8 765
•
1 234
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
■Circuit
D
G
S
4- 1