ELM3C1260A Datasheet, PDF (1/6 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM3C1260A
■General description
ELM3C1260A uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=600V
• Id=12A
• Rds(on) < 0.65Ω (Vgs=10V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Avalanche current
Avalanche energy
L=10mH
Power dissipation
Tc=25°C
Tc=100°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
600
V
±30
V
12.0
A
4
8.5
48
A
3, 4
7.4
A
5
277
mJ
5
50
W
20
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Typ.
Rθjc
Rθja
Max.
2.5
62.5
Unit Note
°C/W
°C/W
■Pin configuration
TO-220F(TOP VIEW)
■Circuit
D
123
Pin No.
1
2
3
Pin name
GATE
DRAIN
SOURCE
G
S
6- 1