ELM38800BA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Dual N-channel MOSFET

Dual N-channel MOSFET
ELM38800BA-S
■General description
ELM38800BA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=20V
• Id=6.3A
• Rds(on) < 22mΩ (Vgs=4.5V)
• Rds(on) < 26mΩ (Vgs=2.5V)
• Rds(on) < 34mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Limit
20
±12
6.3
5.0
50
22
23
1.4
0.9
-55 to 150
Unit
Note
V
V
A
4
A
3, 4
A
mJ
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Typ.
Rθja
Max.
90
Unit Note
°C/W
5
■Pin configuration
TSSOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
GATE1
SOURCE1
SOURCE1
DRAIN1
DRAIN2
SOURCE2
SOURCE2
GATE2
■Circuit
D1
D2
G1
G2
S1
S2
4- 1