ELM36601EA-S Datasheet, PDF (1/7 Pages) ELM Technology Corporation – Complementary MOSFET

Complementary MOSFET
ELM36601EA-S
■General Description
ELM36601EA-S uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Features
N-channel
P-channel
• Vds=30V
Vds=-30V
• Id=3.5A
Id=-2A
• Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 115mΩ(Vgs=-10V)
• Rds(on) < 88mΩ(Vgs=4.5V) Rds(on) < 185mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj,Tstg
N-ch (Max.)
30
±20
3.5
2.8
10
1.15
0.73
-55 to 150
P-ch (Max.)
-30
±20
-2.3
-1.8
-10
1.15
0.73
-55 to 150
Unit Note
V
V
A
A3
W
°C
■Thermal Characteristics
Parameter
Symbol Device Typ.
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤5s
Rθja
Steady-state
Steady-state Rθjl
t≤5s
Rθja
Steady-state
Steady-state Rθjl
N-ch
P-ch
Max.
110
150
80
110
150
80
Unit Note
°C/W
°C/W
■Pin Configuration
SOT-26(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
GATE1
SOURCE2
GATE2
DRAIN2
SOURCE1
DRAIN1
■Circuit
• N-ch
• P-ch
D1
D2
G1
G2
S1
S2
7- 1