ELM34V555A-N Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single P-channel MOSFET

Single P-channel MOSFET
ELM34V555A-N
■General description
ELM34V555A-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
http://www.elm-tech.com
■Features
• Vds=-30V
• Id=-6A
• Rds(on) < 28mΩ (Vgs=-10V)
• Rds(on) < 45mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Tc=25°C
Tc=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
-6.0
A
-4.7
-24
A
3
-19.3
A
18.6
mJ
1.7
W
1.1
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol Typ.
Rθja
Max.
72
Unit Note
°C/W
4
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
■Circuit
D
G
S
Rev.1.0
4-1