ELM34608AA-N Datasheet, PDF (1/7 Pages) ELM Technology Corporation – Complementary MOSFET

Complementary MOSFET
ELM34608AA-N
■General Description
ELM34608AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Features
N-channel
P-channel
• Vds=60V
Vds=-60V
• Id=4.5A
Id=-3.5A
• Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 90mΩ(Vgs=-10V)
• Rds(on) < 85mΩ(Vgs=4.5V) Rds(on) < 135mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj,Tstg
N-ch (Max.)
60
±20
4.5
4.0
20
2.0
1.3
-55 to 150
P-ch (Max.)
-60
±20
-3.5
-3.0
-20
2.0
1.3
-55 to 150
Unit Note
V
V
A
A3
W
°C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol Device Typ.
Rθja N-ch
Rθja P-ch
Max.
62.5
62.5
Unit Note
°C/W
°C/W
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE1
GATE1
SOURCE2
GATE2
DRAIN2
DRAIN2
DRAIN1
DRAIN1
■Circuit
• N-ch
• P-ch
D1
D2
G1
G2
S1
S2
7-1