ELM34417AA-N Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single P-channel MOSFET

Single P-channel MOSFET
ELM34417AA-N
■General description
ELM34417AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-30V
• Id=-6A
• Rds(on) < 45mΩ (Vgs=-10V)
• Rds(on) < 75mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-30
±20
-6
-5
-30
2.5
1.3
-55 to 150
Unit
Note
V
V
A
A
3
W
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-case
Steady-state Rθjc
Maximum junction-to-ambient
Steady-state Rθja
Max.
25
50
Unit Note
°C/W
°C/W
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
■Circuit
D
G
S
4- 1