ELM34416AA-N Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM34416AA-N
■General description
ELM34416AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=30V
• Id=11A
• Rds(on) < 12.0mΩ (Vgs=10V)
• Rds(on) < 17.5mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Ta=25°C
Ta=100°C
Operating junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Las
Eas
Pd
Tj, Tstg
Limit
30
±20
11
7
40
28
40
2.5
1.0
-55 to 150
Unit
Note
V
V
A
A
3
A
mJ
W
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-case
Steady-state Rθjc
Maximum junction-to-ambient
Steady-state Rθja
Max.
25
50
Unit Note
°C/W
■Pin configuration
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
■Circuit
D
G
S
4-1