ELM33417CA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single P-channel MOSFET

Single P-channel MOSFET
ELM33417CA-S
■General description
ELM33417CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-30V
• Id=-4.5A
• Rds(on) < 51mΩ (Vgs=-10V)
• Rds(on) < 85mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-30
±20
-4.5
-3.5
-20
1.25
0.80
-55 to 150
Unit
Note
V
V
A
A
3
W
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤5s
Rθja
Maximum junction-to-ambient
Steady-state Rθja
Maximum junction-to-lead
Steady-state Rθjl
Max.
90
125
60
Unit Note
°C/W
°C/W
°C/W
■Pin configuration
SOT-23(TOP VIEW)
3
1
2
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
4 -1