ELM33414CA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM33414CA-S
■General description
ELM33414CA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 3.5V and internal
ESD protection is included.
■Features
• Vds=60V
• Id=300mA
• Rds(on) < 2Ω (Vgs=10V)
• Rds(on) < 3Ω (Vgs=4.5V)
• Rds(on) < 5Ω (Vgs=3.5V)
• ESD protected
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=100°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
60
±20
300
190
1
0.35
0.14
-40 to 150
Unit
Note
V
V
mA
A
3
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Typ.
Rθja
Max.
350
Unit Note
°C/W
■Pin configuration
SOT-23(TOP VIEW)
3
1
2
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
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