ELM33412CA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM33412CA-S
■General description
ELM33412CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=20V
• Id=6A
• Rds(on) < 24mΩ (Vgs=4.5V)
• Rds(on) < 32mΩ (Vgs=2.5V)
• Rds(on) < 50mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Limit
±8
6
5
25
21
22
1.0
0.6
-55 to 150
Unit
Note
V
A
A
3
A
mJ
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol Typ.
Rθja
Max.
130
Unit Note
°C/W
■Pin configuration
SOT-23(TOP VIEW)
3
1
2
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
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