ELM32D606A-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM32D606A-S
■General description
ELM32D606A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=30V
• Id=24A
• Rds(on) < 18mΩ (Vgs=10V)
• Rds(on) < 27mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Power dissipation
Tc=25°C
Tc=100°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±20
V
24
A
15
60
A
3
12.7
A
8.1
mJ
19.5
W
7.8
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Typ.
Rθjc
Rθja
Max.
6.4
62.5
Unit Note
°C/W
°C/W
■Pin configuration
TO-252-3(TOP VIEW)
TAB
2
1
3
Pin No.
1
2
3
Pin name
GATE
DRAIN
SOURCE
■Circuit
D
G
S
4-1