ELM32403LA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single P-channel MOSFET

Single P-channel MOSFET
ELM32403LA-S
■General description
ELM32403LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=-40V
• Id=-8A
• Rds(on) < 55mΩ (Vgs=-10V)
• Rds(on) < 94mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-40
±20
-8
-6
-32
28
18
-55 to 150
Unit
Note
V
V
A
A
3
W
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-case
Steady-state Rθjc
Maximum junction-to-ambient
Steady-state Rθja
Max.
3
75
Unit Note
°C/W
°C/W
■Pin configuration
TO-252-3(TOP VIEW)
TAB
2
1
3
Pin No.
1
2
3
Pin name
GATE
DRAIN
SOURCE
■Circuit
D
G
S
4- 1