ELM2J07N65-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM2J07N65-S
http://www.elm-tech.com
■General description
■Features
ELM2J07N65-S uses advanced trench technology to
• Vds=650V
provide excellent Rds(on), low gate charge and low gate
• Id=7A
resistance.
• Rds(on) = 570mΩ (Vgs=10V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Avalanche current
Single pulsed avalanche energy
Power dissipation
Tc=25°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Iar
Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
650
V
±30
V
7.0
A
4.4
21
A
1
2.5
A
1
230
mJ
2
83
W
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-case
Symbol
Typ.
Rθja
Rθjc
Max.
62
1.5
Unit Note
°C/W
°C/W
■Pin configuration
TO-252(TOP VIEW)
2
1
3
Pin No.
1
2
3
Pin name
GATE
DRAIN
SOURCE
■Circuit
D
G
S
Rev.1.0
4-1