ELM18807BA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Dual P-channel MOSFET

Dual P-channel MOSFET
ELM18807BA-S
■General description
ELM18807BA-S uses advanced trench technology to
provide excellent Rds(on) and low gate charge. Internal
ESD protection is included.
■Maximum absolute ratings
■Features
• Vds=-12V
• ESD Protected
• Id=-6.5A (Vgs=-4.5V)
• Rds(on) < 20mΩ (Vgs=-4.5V)
• Rds(on) < 24mΩ (Vgs=-2.5V)
• Rds(on) < 30mΩ (Vgs=-1.8V)
• Rds(on) < 36mΩ (Vgs=-1.5V)
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-12
±8
-6.5
-5.0
-60
1.4
0.9
-55 to 150
Unit
Note
V
V
A
A
3
W
2
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤10s
73
Rθja
Maximum junction-to-ambient
Steady-state
96
Maximum junction-to-lead
Steady-state Rθjl
63
Max.
90
125
75
Unit Note
°C/W
1
°C/W 1, 4
°C/W
■Pin configuration
TSSOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
3
4
Pin name
DRAIN1
SOURCE1
SOURCE1
GATE1
Pin No.
5
6
7
8
Pin name
GATE2
SOURCE2
SOURCE2
DRAIN2
■Circuit
D1
D2
G1
Rg
G2
Rg
S1
S2
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