ELM16409EA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single P-channel MOSFET

Single P-channel MOSFET
ELM16409EA-S
■General description
ELM16409EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V and internal
ESD protection.
■Features
• Vds=-20V
• Id=-5A (Vgs=-4.5V)
• Rds(on) < 45mΩ (Vgs=-4.5V)
• Rds(on) < 56mΩ (Vgs=-2.5V)
• Rds(on) < 75mΩ (Vgs=-1.8V)
• ESD Rating : 3000V HBM
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-20
±8
-5.0
-4.2
-30
2.00
1.28
-55 to 150
Unit
Note
V
V
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤10s
47.5
Rθja
Maximum junction-to-ambient
Steady-state
74.0
Maximum junction-to-lead
Steady-state Rθjl
37.0
Max.
62.5
110.0
50.0
Unit Note
°C/W
1
°C/W
°C/W
3
■Pin configuration
SOT-26(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
■Circuit
D
G
S
4- 1