ELM16404EA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM16404EA-S
■General description
ELM16404EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V and internal
ESD protection is included.
■Features
• Vds=20V
• Id=8.6A (Vgs=10V)
• Rds(on) < 17mΩ (Vgs=10V)
• Rds(on) < 18mΩ (Vgs=4.5V)
• Rds(on) < 24mΩ (Vgs=2.5V)
• Rds(on) < 33mΩ (Vgs=1.8V)
• ESD Rating : 2000V HBM
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
20
±12
8.6
6.8
30
2.00
1.28
-55 to 150
Unit
Note
V
V
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤10s
45.0
Rθja
Maximum junction-to-ambient
Steady-state
70.0
Maximum junction-to-lead
Steady-state Rθjl
33.0
Max.
62.5
110.0
50.0
Unit Note
°C/W
1
°C/W
°C/W
3
■Pin configuration
SOT-26(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
■Circuit
D
G
S
4- 1