ELM16402EA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM16402EA-S
■General description
ELM16402EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
• Vds=30V
• Id=6.9A (Vgs=10V)
• Rds(on) < 28mΩ (Vgs=10V)
• Rds(on) < 42mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
30
±20
6.9
5.8
20
2.00
1.44
-55 to 150
Unit
Note
V
V
A
1
A
2
W
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤10s
48.0
Rθja
Maximum junction-to-ambient
Steady-state
74.0
Maximum junction-to-lead
Steady-state Rθjl
35.0
Max.
62.5
110.0
40.0
Unit Note
°C/W
1
°C/W
°C/W
3
■Pin configuration
SOT-26(TOP VIEW)
6
5
4
1
2
3
Pin No.
1
2
3
4
5
6
Pin name
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
■Circuit
D
G
S
4- 1