ELM13434CA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM13434CA-S
■General description
The ELM13434CA-S uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
■Features
• Vds=30V
• Id=4.2A (Vgs=10V)
• Rds(on) < 52mΩ (Vgs=10V)
• Rds(on) < 75mΩ (Vgs=4.5V)
• ESD protected
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
Unit Note
10sec Steady-state
30
V
±20
V
4.2
3.5
A
1, 6
3.3
2.8
30
A
2
1.40
1.00
W
0.90
0.64
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤10s
70
Rθja
Maximum junction-to-ambient
Steady-state
100
Maximum junction-to-lead
Steady-state Rθjl
63
Max.
90
125
80
Unit Note
°C/W
1
°C/W
°C/W
3
■Pin configuration
SOT-23(TOP VIEW)
3
1
2
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
4- 1