ELM13416CA-S_1 Datasheet, PDF (1/5 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM13416CA-S
■General description
ELM13416CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and operation
with gate voltages as low as 1.8V and internal ESD
protection is included.
■Features
• Vds=20V
• Id=6.5A (Vgs=4.5V)
• Rds(on) < 22mΩ (Vgs=4.5V)
• Rds(on) < 26mΩ (Vgs=2.5V)
• Rds(on) < 34mΩ (Vgs=1.8V)
• ESD protected
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
20
±8
6.5
5.2
30
1.4
0.9
-55 to 150
Unit
Note
V
V
A
A
3
W
2
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤10s
70
Rθja
Maximum junction-to-ambient
Steady-state
100
Maximum junction-to-lead
Steady-state Rθjl
63
Max.
90
125
80
Unit Note
°C/W
1
°C/W 1, 4
°C/W
■Pin configuration
SOT-23(TOP VIEW)
3
1
2
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
5- 1