ELM13415CA-S_1 Datasheet, PDF (1/5 Pages) ELM Technology Corporation – Single P-channel MOSFET

Single P-channel MOSFET
ELM13415CA-S
■General description
ELM13415CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance. Internal ESD protection is included.
■Features
• Vds=-20V
• Id=-4A (Vgs=-4.5V)
• Rds(on) < 43mΩ (Vgs=-4.5V)
• Rds(on) < 54mΩ (Vgs=-2.5V)
• Rds(on) < 73mΩ (Vgs=-1.8V)
• ESD protected
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
-20
±8
-4.0
-3.5
-30
1.5
1.0
-55 to 150
Unit
Note
V
V
A
A
3
W
2
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤10s
65
Rθja
Maximum junction-to-ambient
Steady-state
85
Maximum junction-to-lead
Steady-state Rθjl
43
Max.
80
100
52
Unit Note
°C/W
1
°C/W 1, 4
°C/W
■Pin configuration
SOT-23(TOP VIEW)
3
1
2
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
5- 1