ELM13410CA-S Datasheet, PDF (1/4 Pages) ELM Technology Corporation – Single N-channel MOSFET

Single N-channel MOSFET
ELM13410CA-S
■General description
ELM13410CA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 1.8V.
■Features
• Vds=30V
• Id=5.8A (Vgs=10V)
• Rds(on) < 28mΩ (Vgs=10V)
• Rds(on) < 33mΩ (Vgs=4.5V)
• Rds(on) < 52mΩ (Vgs=2.5V)
• Rds(on) < 70mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C
Ta=70°C
Pulsed drain current
Power dissipation
Ta=25°C
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
30
±12
5.8
4.9
30
1.4
1.0
-55 to 150
Unit
Note
V
V
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Symbol Typ.
Maximum junction-to-ambient
t≤10s
65
Rθja
Maximum junction-to-ambient
Steady-state
85
Maximum junction-to-lead
Steady-state Rθjl
43
Max.
90
125
60
Unit Note
°C/W
1
°C/W
°C/W
3
■Pin configuration
SOT-23(TOP VIEW)
3
1
2
Pin No.
1
2
3
Pin name
GATE
SOURCE
DRAIN
■Circuit
D
G
S
4- 1