STBN06I Datasheet, PDF (3/4 Pages) EIC discrete Semiconductors – SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
TYPE
Breakdown Voltage @ It
( Note 1 )
VBR (V)
Min.
Max.
It
(mA)
W orking Peak
Reverse
Voltage
VRWM
(V)
Maximum
Reverse Leakage
@ VRWM
IR
(µA)
Maximum
Reverse
Current
IRSM
(A)
Maximum
Clamping
Voltage @ IRSM
VRSM
(V)
Maximum
Temperature
Co-efficient
of VBR
(% / °C)
STBN062
55.8
68.2
1.0
50.2
5.0
16.9
89.0
0.104
STBN562
58.9
65.1
1.0
53.0
5.0
17.7
85.0
0.104
STBN068
61.2
74.8
1.0
55.1
5.0
15.3
98.0
0.104
STBN568
64.6
71.4
1.0
58.1
5.0
16.3
92.0
0.104
STBN075
67.5
82.5
1.0
60.7
5.0
13.9
108
0.105
STBN575
71.3
78.8
1.0
64.1
5.0
14.6
103
0.105
STBN082
73.8
90.2
1.0
66.4
5.0
12.7
118
0.105
STBN582
77.9
86.1
1.0
70.1
5.0
13.3
113
0.105
STBN091
81.9
100
1.0
73.7
5.0
11.4
131
0.106
STBN591
86.5
95.5
1.0
77.8
5.0
12.0
125
0.106
STBN0B0
90.0
110
1.0
81.0
5.0
10.4
144
0.106
STBN5B0
95.0
105
1.0
85.5
5.0
11.0
137
0.106
STBN0B1
99.0
121
1.0
89.2
5.0
9.5
158
0.107
STBN5B1
105
116
1.0
94.0
5.0
9.9
152
0.107
STBN0B2
108
132
1.0
97.2
5.0
8.7
173
0.107
STBN5B2
114
126
1.0
102
5.0
9.1
165
0.107
STBN0B3
117
143
1.0
105
5.0
8.0
187
0.107
STBN5B3
124
137
1.0
111
5.0
8.4
179
0.107
STBN0B5
135
165
1.0
121
5.0
7.0
215
0.108
STBN5B5
143
158
1.0
128
5.0
7.2
207
0.108
STBN0B6
144
176
1.0
130
5.0
6.5
230
0.108
STBN5B6
152
168
1.0
136
5.0
6.8
219
0.108
STBN0B7
153
187
1.0
138
5.0
6.2
244
0.108
STBN5B7
162
179
1.0
145
5.0
6.4
234
0.108
STBN0B8
162
198
1.0
146
5.0
5.8
258
0.108
STBN5B8
171
189
1.0
154
5.0
6.1
246
0.108
STBN0D0
180
220
1.0
162
5.0
5.2
287
0.108
STBN5D0
190
210
1.0
171
5.0
5.5
274
0.108
Note:
( 1 ) VBR measured after It applied for 300 µs., It = square wave pulse or equivalent.
( 2 ) "STB" will be omitted in marking on the diode.
Page 3 of 4
Rev. 04 : March 25, 2005