3EZ3.9D10 Datasheet, PDF (3/3 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES

ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
TYPE
Nominal Zener
Voltage
VZ @ IZT
IZT
(V)
(mA)
Maximum Zener
Impedance
ZZT @ IZT
ZZK @ IZK
(Ω)
(Ω)
IZK
(mA)
3EZ110D10
3EZ120D10
3EZ130D10
3EZ140D10
3EZ150D10
3EZ160D10
3EZ170D10
3EZ180D10
3EZ190D10
3EZ200D10
3EZ220D10
3EZ240D10
3EZ270D10
3EZ300D10
3EZ330D10
3EZ360D10
3EZ400D10
110
6.8
225
4000
0.25
120
6.3
300
4500
0.25
130
5.8
375
5000
0.25
140
5.3
475
5000
0.25
150
5.0
550
6000
0.25
160
4.7
625
6500
0.25
170
4.4
650
7000
0.25
180
4.2
700
7000
0.25
190
4.0
800
8000
0.25
200
3.7
875
8000
0.25
220
3.4
1600
9000
0.25
240
3.1
1700
9000
0.25
270
2.8
1800
9000
0.25
300
2.5
1900
9000
0.25
330
2.3
2200
9000
0.25
360
2.1
2700
9000
0.25
400
1.9
3500
9000
0.25
Note :
( 1 ) Suffix " 10 " indicates ± 10% tolerance, suffix " 5 " indicates ± 5% tolerance.
( 2 ) " EZ " will be omitted in marking on the diode
Maximum Reverse
Leakage Current
IR @ VR
(µA)
(V)
0.5
83.6
0.5
91.2
0.5
98.8
0.5
106.4
0.5
114.0
0.5
121.6
0.5
130.4
0.5
136.8
0.5
144.8
0.5
152.0
1.0
167.0
1.0
182.0
1.0
205.0
1.0
228.0
1.0
251.0
1.0
274.0
1.0
304.0
Maximum DC
Zener Current
IZM
(mA)
25
22
21
19
18
17
16
15
14
13
12
11
10
9
8
8
7
Page 3 of 3
Rev. 02 : April 1, 2005