SR1R Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – FAST RECOVERY RECTIFIER DIODE

RATING AND CHARACTERISTIC CURVES ( SR1R )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
10 Ω
Trr
+ 0.5
+
50 Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25
1Ω
OSCILLOSCOP
E
- 1.0
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
SET TIME BASE FOR 250 ns/cm
1
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
0.5
0.4
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
8.3 ms SINGLE HALF SINE WAVE
Ta = 75 °C
24
0.3
18
0.2
12
0.1
60Hz RESISTIVE OR INDUCTIVE LOAD
00
25
50
75
100 125 150 175
AMBIENT TEMPERATURE, ( °C)
6.0
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
Pulse W idth = 300 µs
2% Duty Cycle
TJ = 25 °C
10
10
TJ = 100 °C
1.0
1.0
0.1
0.01
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 25, 2005