RBV3500 Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

RATING AND CHARACTERISTIC CURVES ( RBV3500 - RBV3510 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
60
50
40
30
20
10
P.C. Board Mounted with
SINE WAVE R-Load
0
0
25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
600
500
400
TJ = 50 °C
300
200
8.3 ms SINGLE HALF SINE WAVE
100
JEDEC METHOD
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)