GN3A Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

RATING AND CHARACTERISTIC CURVES ( GN3A - GN3M )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
3.0
2.4
1.8
1.2
0.6
00
25
50
75
100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
Pulse W idth = 300 µs
2% Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
Ta = 25 °C
120
90
60
30
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG 4 . - TYPICAL JUNCTION CAPACITANCE
100
50
TJ = 25 °C
10
5
1
12
4 10 20
40 100
REVERSE VOLTAGE, VOLTS
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
10
Ta = 100 °C
1.0
0.1
Ta = 25 °C
0.01
0
20 40 60 80 100 120 ₁₄₀
PERCENT OF RATED REVERSE
VOLTAGE, (%)
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Rev. 01 : Mar 23, 2002