BY251_05 Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

RATING AND CHARACTERISTIC CURVES ( BY251 - BY255 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
3.0
2.4
1.8
1.2
0.6
00
25
50
75
100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
Pulse W idth = 300 µs
2% Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
Ta = 25 °C
80
60
40
20
NON-REPETITIVE
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG 4 . - TYPICAL JUNCTION CAPACITANCE
100
50
TJ = 25 °C
10
5
1
12
4 10 20
40 100
REVERSE VOLTAGE, VOLTS
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
10
Ta = 100 °C
1.0
0.1
Ta = 25 °C
0.01
0 20 40 60 80 100 120 ₁₄₀
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 25, 2005