BR5000W_05 Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

RATING AND CHARACTERISTIC CURVES ( BR5000W - BR5010W )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
600
500
400
TJ = 50 °C
300
200
8.3 ms SINGLE HALF SINE WAVE
100
JEDEC METHOD
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
10
10
Pulse W idth = 300 µs
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
0.0
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
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Rev. 02 : March 24, 2005