BR2500_05 Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

RATING AND CHARACTERISTIC CURVES ( BR2500 - BR2510 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
30
25
20
15
10
HEAT-SINK MOUNTING, Tc
5" x 6" x 4.9" THK.
5
(12.8cm x 15.2cm x 12.4cm)
Al.-Finned plate
0
0
25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
250
200
TJ = 50 °C
150
100
8.3 ms SINGLE HALF SINE WAVE
50
JEDEC METHOD
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse W idth = 300 µs
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED
REVERSE VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 24, 2005