Z1150AM Datasheet, PDF (1/1 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES

Z1150AM & Z1180AM
VZ : 150 & 180 Volts
PD : 1.0 Watts
FEATURES :
* Glass passivated chip
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified.
Rating
DC Power Dissipation at T_L = 75 °C (1)
Maximum Forward Voltage at IF = 200 mA
Junction Temperature Range
Storage Temperature Range
Certificate : TH97/10561QM
Certificate : TW00/17276EM
SILICON ZENER DIODES
M1A
0.085(2.16)
0.075(1.91)
0.024(0.60)
0.022(0.55)
1.00 (25.4)
MIN.
0.138(3.51)
0.122(3.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Symbol
P_D
V_F
T_J
T_STG
Value
1.0
1.2
- 55 to + 175
- 55 to + 175
Unit
W
V
°C
°C
ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Type.
Z1150AM
Z1180AM
Nominal Zener
Voltage ⁽²⁾
V_Z @ I_ZT
(V)
150
180
Test
Current
I_ZT
(mA)
1.7
1.4
Maximum Zener
Impedance
Z_ZT @ I_ZT
Z_ZK @ I_ZK
(Ω)
(Ω)
1000
6000
1200
7000
I_ZK
(mA)
0.25
0.25
Notes :
(1) T_L = Lead temperature at 3/8 " (9.5mm) from body.
(2) The type number listed have a standard tolerance on the nominal zener voltage of ± 5%.
Maximum Reverse
Leakage Current
I_R @ V_R
(μA)
(V)
5.0
114.0
5.0
136.8
Maximum DC
Zener Current
I_ZM
(mA)
6.4
5.2
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Rev. 00 : March 13, 2007