TVR2B Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TV Applications (fast recovery)

TVR2B/D/G/J
PRV : 100 - 600 Volts
Io : 0.5 Ampere
FAST RECOVERY
RECTIFIER DIODES
D2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.161 (4.1)
0.154 (3.9)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum Reverse Voltage (DC)
Maximum Average Forward Current
Maximum Peak One Cycle Surge Forward Current
( Non-repetitive )
Maximum Peak Forward Voltage at IF = 1.0 A
Maximum Repetitive Reverse Current at VRRM
Maximum Reverse Recovery Time (Note 1)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VR
IF(AV)
TVR2B
100
50
TVR2D TVR2G
200
400
100
300
0.5
TVR2J
600
500
IFSM
30 (50Hz)
VF
IRRM
Trr
TJ
TSTG
1.4
10
20
- 40 to + 125
- 40 to + 125
UNIT
V
V
A
A
V
µA
µs
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 20 mA, IR = 1 mA.
Page 1 of 2
Rev. 02 : March 25, 2005