TVR1B Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type

TVR1B/G/J
PRV : 100 - 600 Volts
Io : 0.5 Ampere
FAST RECOVERY
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum Average Forward Current
Maximum Peak One Cycle Surge Forward Current
( Non-repetitive )
Maximum Peak Forward Voltage at IF = 0.5 A
Maximum Repetitive Reverse Current at VRRM
Maximum Reverse Recovery Time
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
IF(AV)
IFSM
VF
IRRM
Trr(1)
Trr(2)
TJ
TSTG
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IR = 100 mA.
( 2 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
TVR1B
100
TVR1G
400
0.5
TVR1J
600
10 (50 Hz)
1.2
10
300 (Typ.)
75
- 40 to + 125
- 40 to + 125
UNIT
V
A
A
V
µA
ns
ns
°C
°C
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Rev. 02 : March 25, 2005