SR26 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY SILICON SURFACE MOUNT

SR26 - SR29
PRV : 100 - 800 Volts
Io : 2.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : SMC Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.21 gram
FAST RECOVERY
SILICON SURFACE MOUNT
SMC (DO-214AB)
1 .1 ± 0.3
3.0 ± 0.2
5.8 ± 0.15
2.3 ± 0.2 ^{0.2 ± 0.0 7}
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Current Ta = 50 °C
IF(AV)
Peak Forward Surge Current, 8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
IFSM
Maximum Peak Forward Voltage at IF = 2.0 A
VF
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
IR
IR(H)
Trr
Typical Junction Capacitance ( Note 2 )
CJ
Junction Temperature Range
TJ
Storage Temperature Range
TSTG
SR26
100
70
100
SR27 SR28
200
400
140
280
200
400
2.0
70
1.3
10
500
250
28
- 50 to + 125
- 50 to + 150
SR29
800
560
800
UNIT
V
V
V
A
A
V
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 2, 2002