SMN1A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
SMN1A - SMN1M
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated junction chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb Free / RoHS Compliant
SOD-123FL
2.5(0.098)
2.9(0.114)
MECHANICAL DATA :
* Case: JEDEC SOD-123FL, molded plastic
over passivated chip
* Terminals: Solder Plated, solderable per
MIL-STD-750, Method 2026
* Polarity: Color band denotes cathode end
* Mounting position : Any
* Weight: 0.02 gram (Approximate)
0.5(0.020)
1.1(0.043)
max0.1(0.004)
3.5(0.138)
3.9(0.154)
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Marking
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I_F = 1.0 Amp.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage Ta = 100 °C
Typical Junction Capacitance (Note1)
Operation Junction Temperature Range
Storage Temperature Range
SYMBOL SMN1A SMN1B SMN1D SMN1G SMN1J SMN1K SMN1M UNIT
V_RRM
V_RMS
V_DC
I_F(AV)
NA
NB
ND
NG
NJ
NK
NM
50 100 200 400 600 800 1000 V
35
70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
1.0
A
I_FSM
30
A
V_F
I_R
I_R(H)
C_J
T_J
T_STG
1.0
V
5.0
μA
50
μA
8.0
pF
- 55 to + 150
°C
- 55 to + 150
°C
Note : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC.
Page 1 of 2
Rev. 01 : January 12, 2009