SFO1 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SUPER FAST RECTIFIER DIODES

SFO1 - SFO9
PRV : 50 - 1000 Volts
Io : 1.5 Amperes
SUPER FAST RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Super fast recovery time
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Peak Forward Surge Current
Ta = 55 °C
8.3 ms. Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.5 A.
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL SFO1 SFO2 SFO3 SFO4 SFO5 SFO6 SFO7 SFO8 SFO9 UNITS
VRRM 50 100 150 200 300 400 600 800 1000 Volts
VRMS 35 70 105 140 210 280 420 560 700 Volts
VDC
50 100 150 200 300 400 600 800 1000 Volts
IF(AV)
1.5
Amps.
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
0.95
60
1.4
5
50
35
50
- 65 to + 150
- 65 to + 150
Amps.
1.7
Volts
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
UPDATE : APRIL 23, 1998