SF11_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SUPER FAST RECTIFIER DIODES

SF11 - SF19
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
SUPER FAST
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Super fast recovery time
* Pb / RoHS Free
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL SF11 SF12 SF13 SF14 SF15 SF16 SF17 SF18 SF19 UNIT
VRRM 50 100 150 200 300 400 600 800 1000 V
VRMS 35 70 105 140 210 280 420 560 700 V
VDC
50 100 150 200 300 400 600 800 1000 V
IF(AV)
1.0
A
IFSM
VF
IR
Trr
CJ
TJ
TSTG
30
0.95
1.7
5.0
35
50
- 65 to + 150
- 65 to + 150
A
4.0
V
10
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 04 : March 25, 2005