SD3030MR Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER RECTIFIER DIODE

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SD3030MR
PRV : 30 Volts
IO : 30 Amperes
SCHOTTKY BARRIER
RECTIFIER DIODE
MR
FEATURES :
* High current capability
* Low forward voltage drop
* High surge capacity
* Low power loss, High efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Polarity : Cathode polarity band
* Mounting position : Any
* Weight : 1.624 grams
5° NOM
0.342 (8.69)
0.332 (8.43)
0.246 (6.25)
0.234 (5.94)
0.175 (4.45)
0.165 (4.19)
0.222 (5.64)
0.218 (5.54)
Dimensions in inches and ( millimetres )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum Surge Peak Reverse Voltage
Maximum Average Forward Current, at Ta = 70 °C
Maximum Peak Forward Surge Current,
50 Hz half sine wave
Maximum Forward Voltage
at I_F = 5 A , T_J = 25 °C
at I_F = 30 A , T_J = 25 °C
Maximum Reverse Current at
@ (T_J = 25 °C)
at V_R = V_RRM
@ (T_J = 125 °C)
Typical Thermal Resistance Junction to Lead (Note 1)
Operating Junction Temperature Range
(T_J ≤ 200 °C in bypass mode (Note 2))
Storage Temperature Range
V_RRM
V_RSM
I_F(AV)
I_FSM
V_F
I_R
I_R(H)
R_Ó¨JL
T_J
T_STG
VALUE
30
30
30
650
0.39
0.55
600
70
1.0
- 50 to + 150
- 50 to + 175
Notes :
(1) Thermal resistance from junction to leas/terminal at distance 0 mm from case.
(2) Max. Junction Temperature T_J ≤150 °C(V_R ≤80% V_RRM) in reverse mode and T_J ≤ 200 °C in bypass mode.
UNIT
V
V
A
A
V
µA
mA
K/W
°C
°C
Page 1 of 2
Rev. 00 : January 24, 2011