SD103AWS Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER

Certificate TH97/10561QM
Certificate TW00/17276EM
SD103AWS - SD103CWS
SCHOTTKY BARRIER DIODES
FEATURES :
* For general purpose applications
* The SD103 series is a metal-on-silicon
Schottky barrier device which is
protected by a PN junction guard ring.
* The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
* These diodes are also available in the MiniMELF case
with type designations LL103A thru LL103C.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
* SD103AWS Marking Code : S4
* SD103BWS Marking Code : S5
* SD103CWS Marking Code : S6
SOD-323
1.80
1.60
2.80
2.30
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics (T_C = 25 °C unless otherwise noted)
Parameter
Repetitive Peak Reverse Voltage
Maximum Single Cycle Surge 10 µs Square Wave
Power Dissipation (Infinite Heat Sink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
SD103AWS
SD103BWS
SD103CWS
Symbol
V_RRM
I_FSM
P_tot
R_θJA
T_J
T_STG
Value
40
30
20
2
150⁽¹⁾
650⁽¹⁾
125⁽¹⁾
-55 to + 150
Unit
V
A
mW
°C/W
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol Test Condition
Min
Reverse Current
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time
SD103AWS
SD103BWS
I_R
SD103CWS
V_F
Ctot
Trr
V_R = 30 V
-
V_R = 20 V
-
V_R = 10 V
-
I_F = 20mA
-
I_F = 200mA
-
V_R = 0 V, f = 1MHz
-
I_F = I_R = 50mA to 200mA
-
recover to 0.1I_R
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
Typ Max Unit
-
5
-
5
μA
-
5
-
0.37
V
-
0.60
50
-
pF
10
-
ns
Page 1 of 2
Rev. 01 : May 4, 2006