SD103A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

SD103A - SD103C
FEATURES :
• For general purpose applications
• The SD103 series is a Metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• Other applications are click suppression, efficient
full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage
battery systems.
• These diodes are also available in the MiniMELF case
with type designations LL103A thru LL103C.
• Pb / RoHS Free
SCHOTTKY BARRIER DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Single Cycle Surge 60 Hz Sine Wave
Power Dissipation (Infinite Heatsink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
SD103A
SD103B
SD103C
V_RRM
I_FSM
P_D
R_θJA
T_J
T_S
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Value
40
30
20
15
400⁽¹⁾
0.3⁽¹⁾
125⁽¹⁾
-55 to + 150 ⁽¹⁾
Unit
V
A
mW
°C/mW
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Current
Forward Voltage Drop
Junction Capacitance
SD103A
SD103B
SD103C
V_R = 30 V
I_R
V_R = 20 V
V_R = 10 V
V_F
I_F = 20mA
I_F = 200mA
Ctot
V_R = 0 V, f = 1MHz
-
-
5
-
-
5
µA
-
-
5
-
-
0.37
V
-
-
0.6
-
50
-
pF
Reverse Recovery Time
Trr
I_F = I_R = 50mA to 200mA
-
10
-
ns
recover to 0.1I_R
Page 1 of 2
Rev. 02 : March 24, 2005