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SD101AWS Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE
Certificate TH97/10561QM
Certificate TW00/17276EM
SD101AWS - SD101CWS
SCHOTTKY BARRIER DIODES
FEATURES :
* For general purpose applications
* The SD101 series is a metal-on-silicon
Schottky barrier device which is
protected by a PN junction guard ring.
* The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
* These diodes are also available in the MiniMELF case
with type designations LL101A thru LL101C.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
* SD101AWS Marking Code : SJ
* SD101BWS Marking Code : SK
* SD101CWS Marking Code : SL
SOD-323
1.80
1.60
2.80
2.30
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Repetitive Peak Reverse Voltage
Maximum Single Cycle Surge 10 µs Square Wave
Power Dissipation (Infinite Heat Sink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
SD101AWS
SD101BWS
SD101CWS
Symbol
VRRM
IFSM
Ptot
RÓ¨JA
TJ
TSTG
Value
60
50
40
2
150(1)
650(1)
125(1)
-55 to + 150
Unit
V
A
mW
°C/W
°C
°C
Electrical Characteristics (TJ = 25 °C unless otherwise noted)
Parameter
Symbol Test Condition
Reverse Breakdown Voltage
Reverse Current
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
V(BR)R
IR
VF
Ctot
Trr
IR = 10 μA
VR = 50 V
VR = 40 V
VR = 30 V
IF = 1mA
IF = 15mA
VR = 0 V, f = 1 MHz
IF = IR = 5mA ,
recover to 0.1IR
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Min
Typ Max Unit
60
-
-
50
-
-
V
40
-
-
-
-
200
-
-
200
nA
-
-
200
-
-
0.41
-
-
0.40
-
-
-
-
0.39
1.00
V
-
-
0.95
-
-
0.90
-
-
2.0
-
-
2.1
pF
-
-
2.2
-
-
1
ns
Page 1 of 2
Rev. 01 : May 4, 2006
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