SD101A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

SD101A - SD101C
FEATURES :
• For general purpose applications
• The LL101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• These diodes are also available in the MiniMELF case
with type designations LL101A thru LL101C.
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
SCHOTTKY BARRIER DIODES
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
Cathode
Mark
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Maximum Single Cycle Surge 10ms Square Wave
Power Dissipation (Infinite Heatsink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
SD101A
SD101B
SD101C
V_RRM
I_FSM
P_D
R_θJA
T_J
T_S
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Breakdown Voltage
SD101A
SD101B
SD101C
V_(BR)R
I_R = 10 µA
Reverse Current
Forward Voltage Drop
Reverse Recovery Time
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
V_R = 50 V
I_R
V_R = 40 V
V_R = 30 V
I_F = 1mA
V_F
I_F = 15mA
Trr
I_F = I_R = 5mA ,
recover to 0.1I_R
Value
60
50
40
2
400⁽¹⁾
0.3⁽¹⁾
125⁽¹⁾
-55 to + 150 ⁽¹⁾
Min
Typ
Max
60
-
-
50
-
-
40
-
-
-
-
200
-
-
200
-
-
200
-
-
0.41
-
-
0.4
-
-
0.39
-
-
1.0
-
-
0.95
-
-
0.9
-
-
1
Unit
V
A
mW
°C/mW
°C
°C
Unit
V
nA
V
ns
Page 1 of 2
Rev. 02 : March 24, 2005