SBT20_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER RECTIFIER DIODES

SBT20 - SBTB0
PRV : 20 - 100 Volts
IO : 2.5 Amperes
SCHOTTKY BARRIER
RECTIFIER DIODES
D2A
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low cost
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.161 (4.1)
0.154 (3.9)
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375", 9.5mm Lead Length See Fig.1
Maximum Peak Forward Surge Current,
8.3ms single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.5 A (Note 1)
Maximum Reverse Current at
Rated DC Blocking Voltage (Note 1)
Junction Temperature Range
Storage Temperature Range
SYMBOL
SBT
20
SBT
30
SBT
40
SBT
50
SBT
60
SBT
70
SBT
80
SBT
90
SB
TB0
UNIT
VRRM 20 30 40 50 60 70 80 90 100 V
VRMS 14 21 28 35 42 49 56 63 70
V
VDC
20 30 40 50 60 70 80 90 100 V
IF(AV)
2.5
A
IFSM
75
A
VF
0.5
0.74
0.79
V
IR
0.5
mA
TJ
- 65 to + 125
- 65 to + 150
°C
TSTG
- 65 to + 150
°C
Note :
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%.
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Rev. 02 : March 25, 2005