SBT20S Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER RECTIFIER DIODES

ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : [phone] FAX. : [phone] E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
SBT20S - SBTB0S
PRV : 20 - 100 Volts
IO : 2.5 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low cost
* Low forward voltage drop
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375", 9.5mm Lead Length See Fig.1
Peak Forward Surge Current,
8.3ms single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.5 Amps. (Note 1)
Maximum Reverse Current at
Rated DC Blocking Voltage (Note 1)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%.
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
TJ
TSTG
SCHOTTKY BARRIER
RECTIFIER DIODES
D2
0.161 (4.1)
0.154 (3.9)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
SBT 20S SBT 30S SBT 40S SBT 50S SBT 60S SBT 70S SBT 80S SBT 90S SB TB0S
20
30
40
50
60
70
80
90
100
14
21
28
35
42
49
56
63
70
20
30
40
50
60
70
80
90
100
UNIT
Volts
Volts
Volts
2.5
Amps.
0.5
- 65 to + 125
75
0.74
0.79
0.5
- 65 to + 150
- 65 to + 150
Amps.
Volt.
mA
°C
°C
UPDATE : MAY 10, 1999