SB320S_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER RECTIFIER DIODES

SB320S - SB3B0S
PRV : 20 - 100 Volts
IO : 3.0 Amperes
SCHOTTKY BARRIER
RECTIFIER DIODES
D2A
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
0.161 (4.1)
0.154 (3.9)
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375", 9.5mm Lead Length See Fig.1
Maximum Peak Forward Surge Current,
8.3ms single half sine wave superimposed
on rated load (JEDEC Method)
Typical thermal resistance (Note 2)
Maximum Forward Voltage at IF = 3.0 A
Maximum Reverse Current at
Ta = 25 °C
Rated DC Blocking Voltage (Note 1) Ta = 100 °C
Junction Temperature Range
Storage Temperature Range
SYMBOL
SB
320S
SB
330S
SB
340S
SB
350S
SB
360S
SB
370S
SB
380S
SB SB
390S 3B0S
UNIT
VRRM 20 30 40 50 60 70 80 90 100 V
VRMS 14 21 28 35 42 49 56 63 70
V
VDC 20 30 40 50 60 70 80 90 100 V
IF(AV)
3.0
A
IFSM
RÓ©JA
RÓ©JL
VF
IR
IR(H)
TJ
TSTG
0.5
- 65 to + 125
80
40
12
0.74
0.79
0.5
20
- 65 to + 150
- 65 to + 150
A
o_C/W
V
mA
mA
°C
°C
Note : (1) Pulse Test : Pulse Width = 300 ms, Duty Cycle = 2%
(2) Thermal resistance from junction to lead vertical P.C.B. mounting, 0.500"(12.7 mm) lead length with 2.5 x 2.5"(63.5x63.5mm) copper pad
Page 1 of 2
Rev.03 : August 5, 2005