SB220S_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER RECTIFIER DIODES

SB220S - SB2B0S
PRV : 20 - 100 Volts
IO : 2.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low cost
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.312 gram
SCHOTTKY BARRIER
RECTIFIER DIODES
DO - 41
0.107 (2.74)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.20)
0.160 (4.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375", 9.5mm Lead Length See Fig.1
Maximum Peak Forward Surge Current,
8.3ms single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.0 A (Note 1)
Maximum Reverse Current at
Rated DC Blocking Voltage (Note 1)
Junction Temperature Range
Storage Temperature Range
SYMBOL
SB
220S
SB
230S
SB
240S
SB
250S
SB
260S
SB
270S
SB
280S
SB
290S
SB
2B0S
UNIT
VRRM 20 30 40 50 60 70 80 90 100 V
VRMS 14 21 28 35 42 49 56 63 70
V
VDC 20 30 40 50 60 70 80 90 100 V
IF(AV)
2.0
A
IFSM
60
A
VF
0.5
0.74
0.79
V
IR
0.5
mA
TJ
- 65 to + 125
- 65 to + 150
°C
TSTG
- 65 to + 150
°C
Notes :
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%.
Page 1 of 2
Rev. 02 : March 25, 2005